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| HEXFET(R) Power MOSFETs www.irf.com ID VFM ID V (BR)DSS Continuous Forward R DS(on) R PD Drain-to-Source Continuous Voltage On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70 Part Resistance Voltage Resistance 1 Dissipation 1 Drop @ TJ 25C = 25C (A) (V) ( ) (C/W) (W) Number (A) Fax Case on Demand Outline Number Key Surface Mount Packages FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode) N-Channel IRF7521D1 IRF7523D1 20 30 0.135 0.135 2.4 2.4 1.9 1.9 100 100 1.25 0.8 0.50 @ 1.0A 0.50 @ 1.0A FETKY Micro8 91646 91647 P-Channel IRF7524D1 IRF7526D1 -20 -30 0.27 0.27 -1.7 -1.7 -1.4 -1.4 100 100 0.8 0.8 0.50 @ 1.0A 0.50 @ 1.0A 91648 91649 1 Measured at ambient for Micro8 and SO-8 package styles. All others measured at case. SO-8 TO-220AB Micro8 Illustrations not to scale D -Pak 2 To view a datasheet, click on the part number HEXFET(R) Power MOSFETs www.irf.com ID VFM ID V (BR)DSS Continuous Forward R DS(on) R PD Drain-to-Source Continuous Voltage On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70 Part Resistance Voltage Resistance 1 Dissipation 1 Drop @ TJ 25C = 25C (A) (V) ( ) (C/W) (W) Number (A) Fax Case on Demand Outline Number Key Surface Mount Packages FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode) N-Channel IRF7421D1 IRF7422D2 30 -20 0.035 0.09 4.1 -2.9 3.3 -2.3 50 50 1.0 1.0 0.50 @ 1.0A 0.57 @ 3.0A FETKY SO-8 91411 91412 H5 P-Channel IRF7321D2 -30 0.058 -4.9 -3.9 62.5 2.0 0.57 @ 3.0A 91667 H5 1 Measured at ambient for Micro8 and SO-8 package styles. All others measured at case. SO-8 TO-220AB Micro8 Illustrations not to scale D -Pak 2 To view a datasheet, click on the part number HEXFET(R) Power MOSFETs www.irf.com ID ID V (BR)DSS Continuous R PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100 Part Resistance Voltage Resistance 1 Dissipation 1 25C (A) (V) ( ) (C/W) (W) Number (A) Fax Case on Demand Outline Number Key Surface Mount Packages FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode): Logic Level N-Channel IRL3103D1S 30 0.014 54 34 1.8 3.1 91558 D2Pak H10 1 Measured at ambient for Micro8 and SO-8 package styles. All others measured at case. SO-8 TO-220AB Micro8 Illustrations not to scale D -Pak 2 To view a datasheet, click on the part number HEXFET(R) Power MOSFETs www.irf.com ID ID V (BR)DSS Continuous R PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100 Part Resistance Voltage Resistance 1 Dissipation 1 25C (A) (V) ( ) (C/W) (W) Number (A) Fax Case on Demand Outline Number Key Through-Hole Packages FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode): Logic Level N-Channel IRL3103D1 30 0.014 54 34 1.8 2 TO-220AB 91608 H12 1 Measured at ambient for Micro8 and SO-8 package styles. All others measured at case. SO-8 TO-220AB Micro8 Illustrations not to scale D -Pak 2 To view a datasheet, click on the part number |
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